BS616LV8019EI70
BRILLIANCE SEMICONDUCTOR INC
- Lifecycle statusDiscontinued
- DescriptionStandard SRAM, 512KX16, 70ns, CMOS, PDSO44
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G44
- Memory Width16
- Package CodeTSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeSTANDARD SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization512KX16
- Number of Terminals44
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)70
- Number of Words Code512K
- Memory Density (bits)8388608
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)5
- Number of Words (words)524288
- Standby Current-Max (A)2.5E-6
- Standby Voltage-Min (V)1.5
- Supply Current-Max (mA)61
- Package Equivalence CodeTSOP44,.46,32
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)240
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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BS616LV8019EI70