BM022N120KJ
Mitsubishi Electric Corp.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 107A I(D), 1200V, 0.033ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)468
- Drain Current-Max (ID) (A)107
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Feedback Cap-Max (Crss) (pF)8
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)284
- Drain-source On Resistance-Max (ohm)0.033
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