BLP9H10-30GZ
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Power Transistor, 0.616 to 0.96 GHz, 30 W, 19 dB, 50 V, SOT1483-1, LDMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Reference StandardIEC-60134
- Number of Terminals2
- Power Gain-Min (Gp)17.3 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min105 V
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.62 ohm
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BLP9H10-30GZ
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BLP9H10-30GZ