BLP35M805Z
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Power Transistor, 0.01 to 3.5 GHz, 5 W, 18 dB, 32 V, SOT1371-1, LDMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-N16
- ConfigurationSINGLE
- JEDEC-95 CodeMO-229
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Power Gain-Min (Gp) (dB)17
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)225
- Screening Level / Reference StandardIEC-60134
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BLP35M805Z
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BLP35M805Z