BLP15M9S30GZ
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Power Transistor, 0.01 to 1.5 GHz, 30 W, 19.3 dB, 32 V, SOT1483-1, LDMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G2
- ConfigurationN-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Power Gain-Min (Gp) (dB)16.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Feedback Cap-Max (Crss) (pF)0.39
- Operating Temperature-Max (Cel)225
- Screening Level / Reference StandardIEC-60134
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BLP15M9S30GZ
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BLP15M9S30GZ