BLP15H9S10Z
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Transistor, 0.001 to 1.5 GHz, 10 W, 21 dB, 50 V, SOT1482-1, LDMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDFP-F2
- ConfigurationDual, Common Source
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Number of Elements1
- Reference StandardIEC-60134
- Number of Terminals2
- Power Gain-Min (Gp)19 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.1 pF
- DS Breakdown Voltage-Min106 V
- Operating Temperature-Max225 Cel
- Transistor Element MaterialSILICON
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BLP15H9S10Z
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BLP15H9S10Z