BLP0427M9S20
Ampleon Netherlands B.V.
- Lifecycle statusContact Mfr
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDFP-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Reference StandardIEC-60134
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min65 V
- Operating Temperature-Max225 Cel
- Transistor Element MaterialSILICON
0 suppliers available to buy or to bid for BLP0427M9S20
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
BLP0427M9S20
Send an RFQ
BLP0427M9S20