BLF888ES
Ampleon Netherlands B.V.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFP-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)15.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)104
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Screening Level / Reference StandardIEC-60134
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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BLF888ES