BLF6G15LS-500H
Ampleon Netherlands B.V.
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CDFP-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)45
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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BLF6G15LS-500H
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BLF6G15LS-500H