BLF6G15L-40BRN
Ampleon Netherlands B.V.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeS-CQFM-F6
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements2
- Number of Terminals6
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)11
- Moisture Sensitivity LevelNOT APPLICABLE
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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BLF6G15L-40BRN