- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.5
- Operating Temperature-Max (Cel)200
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BLF542
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BLF542