BLF246B
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionRF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)130
- Drain Current-Max (ID) (A)8
- Operating Temperature-Max (Cel)200
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BLF246B
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BLF246B