- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 2.7A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyTRENCH MOSFET
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2
- Drain Current-Max (ID) (A)2.7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)38
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)14
- Pulsed Drain Current-Max (IDM) (A)19
- Drain-source On Resistance-Max (ohm)0.15
- Screening Level / Reference StandardMIL-STD-202
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BL6202