- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 4A I(D), 20V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)92
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)5.5
- Pulsed Drain Current-Max (IDM) (A)30
- Drain-source On Resistance-Max (ohm)0.07
- Screening Level / Reference StandardMIL-STD-202
0 suppliers available to buy or to bid for BL3415-3L
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
BL3415-3L