- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 5.7A I(D), 30V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.4
- Drain Current-Max (ID) (A)5.7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)65
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)1.4
- Pulsed Drain Current-Max (IDM) (A)25
- Drain-source On Resistance-Max (ohm)0.0265
0 suppliers available to buy or to bid for BL3400G-3L
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
BL3400G-3L