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BL1N60I

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD BL1N60I
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-251
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    30
  • Drain Current-Max (ID) (A)
    1.2
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    600
  • Feedback Cap-Max (Crss) (pF)
    9
  • Operating Temperature-Max (Cel)
    150
  • Operating Temperature-Min (Cel)
    -55
  • Avalanche Energy Rating (Eas) (mJ)
    20
  • Pulsed Drain Current-Max (IDM) (A)
    4
  • Drain-source On Resistance-Max (ohm)
    11.5
  • Screening Level / Reference Standard
    MIL-STD-202

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BL1N60I
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BL1N60I