BG2011SM-BTR
ROHM Semiconductor
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min6 V
- Transistor Element MaterialGALLIUM ARSENIDE
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BG2011SM-BTR
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BG2011SM-BTR