BFT99
Siemens AG
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Power Gain-Min (Gp) (dB)12
- Power Dissipation-Max (W)4
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.35
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)20
- Transition Frequency-Nom (fT) (MHz)3300
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BFT99
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BFT99