BFG235E6327
Siemens AG
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT IN EMITTER BALLASTING RESISTOR
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.3
- Collector-emitter Voltage-Max (V)15
- Collector-base Capacitance-Max (pF)3.6
- Transition Frequency-Nom (fT) (MHz)5500
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BFG235E6327