BFG235
Siemens AG
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT IN EMITTER BALLASTING RESISTOR
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)50
- Power Dissipation-Max (W)2
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.3
- Operating Temperature-Max (Cel)150
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BFG235