BF966SB
VISHAY TELEFUNKEN
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-50
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-50
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.03 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.035 pF
- DS Breakdown Voltage-Min20 V
- Transistor Element MaterialSILICON
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BF966SB
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BF966SB