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BDV65C

COMSET SEMICONDUCTORS

BDV65C Datasheet
COMSET SEMICONDUCTORS BDV65C
  • Lifecycle status
    Contact Mfr
  • RoHS
    RoHS compliant
  • Description
    NPN power transistor, BDV65C, COMSET The BDV65C is a silicon epitaxial base transistor mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications. Features Compliance to RoHS
  • Category
    Semiconductors Transistors Power Bipolar Transistors
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    DARLINGTON
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • VCEsat-Max (V)
    2
  • Case Connection
    COLLECTOR
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • DC Current Gain-Min (hFE)
    1000
  • Power Dissipation-Max (W)
    125
  • Transistor Element Material
    SILICON
  • Collector Current-Max (IC) (A)
    12
  • Operating Temperature-Max (Cel)
    150
  • Collector-emitter Voltage-Max (V)
    120
  • Power Dissipation Ambient-Max (W)
    3.5

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BDV65C
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BDV65C