BB506MFS-TL-H
Renesas Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans RF MOSFET N-CH 6V 0.03A 4-Pin(3+Tab) MPAK T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)19
- Power Dissipation-Max (W)0.3
- Drain Current-Max (ID) (A)0.03
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)6
- Feedback Cap-Max (Crss) (pF)0.05
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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BB506MFS-TL-H