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BB502MBS-TL-E

Renesas Electronics Corp.

Renesas Electronics Corp. BB502MBS-TL-E
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PDSO-G4
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e6
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    DUAL GATE, DEPLETION MODE
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Terminal Position
    DUAL
  • Additional Feature
    LOW NOISE
  • Number of Elements
    1
  • Number of Terminals
    4
  • Power Gain-Min (Gp)
    17 dB
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    0.02 A
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Transistor Application
    AMPLIFIER
  • Feedback Cap-Max (Crss)
    0.05 pF
  • DS Breakdown Voltage-Min
    6 V
  • Operating Temperature-Max
    150 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    0.15 W
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    20

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BB502MBS-TL-E
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BB502MBS-TL-E