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BA779S-GS08

VISHAY SEMICONDUCTORS

VISHAY SEMICONDUCTORS BA779S-GS08
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.10.00.80
  • SB Code
    8541.10.00.80
  • Diode Type
    PIN DIODE
  • Technology
    POSITIVE-INTRINSIC-NEGATIVE
  • Application
    ATTENUATOR
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Frequency Band
    ULTRA HIGH FREQUENCY
  • J-STD-609 Code
    e3
  • Terminal Finish
    MATTE TIN
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Diode Element Material
    SILICON
  • Breakdown Voltage-Min (V)
    30
  • Diode Capacitance-Max (pF)
    0.5
  • Moisture Sensitivity Level
    1
  • Diode Forward Resistance-Max (ohm)
    50
  • Minority Carrier Lifetime-Nom (us)
    4

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BA779S-GS08
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BA779S-GS08