BA682GS18
TEMIC SEMICONDUCTORS
- Lifecycle statusTransferred
- DescriptionMixer Diode, Very High Frequency, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- JESD-30 CodeO-LELF-R2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountYES
- Terminal FormWRAP AROUND
- Frequency BandVERY HIGH FREQUENCY
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionEND
- Number of Elements1
- Number of Terminals2
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Output Current-Max (A)100
- Forward Voltage-Max (V)1
- Reverse Current-Max (uA)0.05
- Breakdown Voltage-Min (V)35
- Diode Capacitance-Max (pF)1.5
- Operating Temperature-Max (Cel)150
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BA682GS18