AUIRF7343Q by International Rectifier Corporation | Sourcengine

International Rectifier Corporation AUIRF7343Q

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
4.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
72
Pulsed Drain Current-Max (IDM) (A)
38
Drain-source On Resistance-Max (ohm)
0.05