AUIRF6215S
International Rectifier Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)110
- Drain Current-Max (ID) (A)13
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)310
- Pulsed Drain Current-Max (IDM) (A)44
- Drain-source On Resistance-Max (ohm)0.29
- Screening Level / Reference StandardAEC-Q101
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AUIRF6215S