ATP301 by SANYO Semiconductor Co., Ltd. | Sourcengine

SANYO Semiconductor Co., Ltd. ATP301

Lifecycle status
Transferred
Description
Power Field-Effect Transistor, 28A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
28
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Avalanche Energy Rating (Eas) (mJ)
54
Pulsed Drain Current-Max (IDM) (A)
112
Drain-source On Resistance-Max (ohm)
0.075