ATF-531P8-TR2
Agilent Technologies, Inc.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE
- JEDEC-95 CodeMO-229
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Power Gain-Min (Gp) (dB)18.5
- Drain Current-Max (ID) (A)0.3
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)7
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)1
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ATF-531P8-TR2