ATF-26884-STR
Agilent Technologies, Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)7
- Drain Current-Max (ID) (A)0.09
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)7
- Operating Temperature-Max (Cel)175
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ATF-26884-STR
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ATF-26884-STR