AT-64020G
Agilent Technologies, Inc.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-MRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee3
- Terminal FinishTIN
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- DC Current Gain-Min (hFE)20
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.2
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)20
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AT-64020G
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AT-64020G