ASJD1200R045Y-EX/V
MICROSS COMPONENTS
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 50A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-257AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)50
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Operating Temperature-Max (Cel)200
- Pulsed Drain Current-Max (IDM) (A)150
- Drain-source On Resistance-Max (ohm)0.045
- Screening Level / Reference StandardMIL-19500
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ASJD1200R045Y-EX/V