ASI10660
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CXFM-F6
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionUNSPECIFIED
- Number of Terminals6
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)14
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)25
- Collector-base Capacitance-Max (pF)150
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ASI10660
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ASI10660