ASAT10 by ASI Semiconductor, Inc. | Sourcengine

ASI Semiconductor, Inc. ASAT10

Lifecycle status
Active
Description
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
29
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2.3
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
7