AS4LC1M16ECJ-8/883C
AUSTIN SEMICONDUCTOR INC
- Lifecycle statusDiscontinued
- DescriptionEDO DRAM, 1MX16, 80ns, CMOS, CDSO44
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width11.43 mm
- Length20.955 mm
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-CDSO-J44
- Memory Width16
- Organization1MX16
- Package CodeSOJ
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density16777216 bit
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Terminal Pitch0.8 mm
- Access Time-Max80 ns
- Number of Ports1
- Number of Words1048576 words
- Screening LevelMIL-STD-883
- Terminal FinishTIN LEAD
- Seated Height-Max4.064 mm
- Temperature GradeMILITARY
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Number of Functions1
- Number of Terminals44
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Output Characteristics3-STATE
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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AS4LC1M16ECJ-8/883C