AS4DDR264M65PBG1-5/ET
AUSTIN SEMICONDUCTOR INC
- Lifecycle statusTransferred
- DescriptionDDR2 DRAM, 64MX64, 0.6ns, CMOS, PBGA208
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B208
- Memory Width64
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX64
- Number of Functions1
- Number of Terminals208
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.6
- Number of Words Code64M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)67108864
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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AS4DDR264M65PBG1-5/ET