AS4DDR16M72-75/ET
MICROSS COMPONENTS
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionDDR1 DRAM, 16MX72, 0.75ns, CMOS, PBGA219
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B219
- Memory Width72
- Organization16MX72
- Package CodeBGA
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1207959552 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch1.27 mm
- Access Time-Max0.75 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishPALLADIUM GOLD
- Seated Height-Max2.03 mm
- Temperature GradeMILITARY
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max2000 mA
- Number of Functions1
- Number of Terminals219
- Standby Current-Max0.02 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA219,16X16,50
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)133 MHz
0 suppliers available to buy or to bid for AS4DDR16M72-75/ET
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AS4DDR16M72-75/ET