ARF476FL
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XDFM-F8
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH VOLTAGE
- Number of Elements2
- Number of Terminals8
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)10
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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ARF476FL
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ARF476FL