ARF1510
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XDSO-F10
- ConfigurationBRIDGE, 4 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals10
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)1000
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ARF1510
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ARF1510