APTM60A23FT1G
Microsemi Corporation
- Lifecycle statusEOL
- DescriptionMOSFET 2N-CH 600V 20A SP1
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X12
- Configuration2 N-Channel (Half Bridge)
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements2
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.23 ohm
- Pulsed Drain Current-Max (IDM)125 A
0 suppliers available to buy or to bid for APTM60A23FT1G
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
APTM60A23FT1G