APTM50HM35FG
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 99A I(D), 500V, 0.039ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X12
- ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements4
- Number of Terminals12
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)99
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)3000
- Pulsed Drain Current-Max (IDM) (A)396
- Drain-source On Resistance-Max (ohm)0.039
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APTM50HM35FG