APTM50DAM17G by Microsemi Corporation | Sourcengine

Microsemi Corporation APTM50DAM17G

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 180A I(D), 500V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
5
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
180
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
720
Drain-source On Resistance-Max (ohm)
0.017