APTM120UM70D-A1N
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 171A I(D), 1200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals5
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)171 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1200 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)3200 mJ
- Drain-source On Resistance-Max0.07 ohm
- Pulsed Drain Current-Max (IDM)684 A
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