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APTM100H80FT1G

Microsemi Corporation

Microsemi Corporation APTM100H80FT1G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-XUFM-X12
  • Configuration
    4 N-Channel (Half Bridge)
  • JESD-609 Code
    e1
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    4
  • Number of Terminals
    12
  • Qualification Status
    Not Qualified
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    11 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    1000 V
  • Operating Temperature-Max
    150 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    208 W
  • Transistor Element Material
    SILICON
  • Drain-source On Resistance-Max
    0.96 ohm
  • Pulsed Drain Current-Max (IDM)
    68 A

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APTM100H80FT1G
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APTM100H80FT1G