APTM100DA18T
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 43A I(D), 1000V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X12
- ConfigurationSINGLE WITH BUILT-IN DIODE AND THERMISTOR
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)43 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1000 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)780 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)3000 mJ
- Drain-source On Resistance-Max0.215 ohm
- Pulsed Drain Current-Max (IDM)172 A
0 suppliers available to buy or to bid for APTM100DA18T
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
APTM100DA18T
Send an RFQ
APTM100DA18T