APTM100DA18T
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 43A I(D), 1000V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X12
- ConfigurationSINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals12
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)43
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)1000
- Avalanche Energy Rating (Eas) (mJ)3000
- Pulsed Drain Current-Max (IDM) (A)172
- Drain-source On Resistance-Max (ohm)0.215
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APTM100DA18T