APTGT300H60 by Microsemi Corporation | Sourcengine

Microsemi Corporation APTGT300H60

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X12
Configuration
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e0
VCEsat-Max (V)
1.8
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
4
Number of Terminals
12
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1150
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
170
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
320
Collector Current-Max (IC) (A)
430
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
600