APTGT200DA60T3AG by Microsemi Corporation | Sourcengine

Microsemi Corporation APTGT200DA60T3AG

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 290A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X8
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.9
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
8
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
750
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
180
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
370
Collector Current-Max (IC) (A)
290
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED