APT68GA60S
Microsemi Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishPURE MATTE TIN
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)46 ns
- Gate-emitter Voltage-Max30 V
- Turn-off Time-Nom (toff)304 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)121 A
- Power Dissipation-Max (Abs)520 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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APT68GA60S